Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase. In: Physical Review B, 33 (2). pp. 1492-1494.
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The electrical resistivity of layerd crystalline GeSe has been investigated up to a pressure of 100 kbar and down to liquid-nitrogen temperature by use of a Bridgman anvil device. A pressure-induced first-order phase transition has been observed in single-crystal GeSe near 6 GPa. The high-pressure phase is found to be quenchable and an x-ray diffraction study of the quenched material reveals that it has the face-centered-cubic structure. Resistivity measurements as a function of pressure and temperature suggest that the high-pressure phase is metallic.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to The American Physical Society.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||27 Jan 2010 08:27|
|Last Modified:||19 Sep 2010 05:43|
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