Parthasarathy, G and Bandyopadhyay, AK and Asokan, S and Gopal, ESR (1984) Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass. In: Solid State Communications, 51 (4). pp. 195-197.
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An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to Elsevier Science.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||03 Sep 2009 10:36|
|Last Modified:||19 Sep 2010 05:43|
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