Raju, TA and Talwai, AS (1981) Metal-insulator-semiconductor capacitors with bismuth oxide as insulator. In: Journal Of Applied Physics, 52 (7). pp. 4877-4878.
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Metal-insulator-semiconductor capacitors using aluminum Bi2O3 and silicon have been studied for varactor applications. Reactively sputtered Bi2O3 films which under suitable proportions of oxygen and argon and had high resistivity suitable for device applications showed a dielectric constant of 25. Journal of Applied Physics is copyrighted by The American Institute of Physics.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Amer Inst Physics.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||18 Jan 2010 09:26|
|Last Modified:||19 Sep 2010 05:46|
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