Katti, VR and Govindacharyulu, PA and Bose, DN (1972) Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films. In: Thin Solid Films, 14 (1). pp. 143-148.
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The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.
|Item Type:||Journal Article|
|Additional Information:||Copy right of this article belongs to Elsevier Science.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||13 Jan 2010 04:31|
|Last Modified:||19 Sep 2010 05:46|
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