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Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films

Katti, VR and Govindacharyulu, PA and Bose, DN (1972) Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films. In: Thin Solid Films, 14 (1). pp. 143-148.

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Abstract

The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.

Item Type: Journal Article
Additional Information: Copy right of this article belongs to Elsevier Science.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 13 Jan 2010 04:31
Last Modified: 19 Sep 2010 05:46
URI: http://eprints.iisc.ernet.in/id/eprint/23620

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