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Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure

Bhatia, KL and Parthasarathy, G and Gopal, ESR (1983) Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure. In: Journal of Non-Crystalline Solids, 59-60 (2). pp. 1019-1021.

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Abstract

Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Elsevier science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Jan 2010 05:00
Last Modified: 19 Sep 2010 05:48
URI: http://eprints.iisc.ernet.in/id/eprint/24085

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