Chitara, Basant and Jebakumar, DS Ivan and Rao, CNR and Krupanidhi, SB (2009) Negative differential resistance in GaN nanocrystals above room temperature. In: Nanotechnology, 20 (40). pp. 1-4.
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Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is similar to 7 V above room temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)|
|Date Deposited:||06 Jan 2010 10:41|
|Last Modified:||19 Sep 2010 05:49|
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