Rohatgi, PK and Sharma, RC and Prabhakar, KV (1975) Microstructure and mechanical properties of unidirectionally solidified Al-Si-Ni ternary eutectic. In: Metallurgical Transactions, 6 (3). pp. 569-575.
fulltextjkl.pdf - Published Version
Restricted to Registered users only
Download (3276Kb) | Request a copy
Al-10.98 pct Si-4.9 pct Ni ternary eutectic alloy was unidirectionally solidified at growth rates from 1.39μm/sec to 6.95μm/sec. Binary Al-Ni and Al-Si eutectics prepared from the same purity metals were also solidified under similar conditions to characterize the growth conditions under the conditions of present study. NiAl3 phase appeared as fibers in the binary Al-Ni eutectic and silicon appeared as irregular plates in the binary Al-Si eutectic. However, in the ternary Al-Si-Ni eutectic alloy both NiAl3 and silicon phases appeared as irregular plates dispersed in α-Al phase, without any regular repctitive arrangement. The size and spacing of NiAl3 and Si platelets in cone shaped colonies decreased with an increase in the growth rate of the ternary eutectic. Examination of specimen quenched during unidirectional solidification indicated that the ternary eutectic grows with a non-planar interface with both Si and NiAl3 phases protruding into the liquid. It is concluded that it will be difficult to grow regular ternary eutectic structures even if only one phase has a high entropy of melting. The tensile strength and modulus of unidirectionally solidified Al-Si-Ni eutectic was lower than the chill cast alloys of the same composition, and decreased with a decrease in growth rate. Tensile modulus and strength of ternary Al-Si-Ni eutectic alloys was greater than binary Al-Si eutectic alloy under similar growth conditions, both in the chill cast and in unidirectionally solidified conditions.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Springer.|
|Department/Centre:||Division of Mechanical Sciences > Mechanical Engineering|
|Date Deposited:||22 Jan 2010 04:56|
|Last Modified:||19 Sep 2010 05:49|
Actions (login required)