Osterwald, C and Cheek, G and Dubow, JB and Verneker, VR Pai (1979) Molybdenum trioxide (MoO3)/silicon photodiodes. In: Applied Physics Letter, 35 (10). 775 -776.
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Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.
|Item Type:||Journal Article|
|Additional Information:||Copy right of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Chemical Sciences > Inorganic & Physical Chemistry|
|Date Deposited:||05 Jan 2010 06:02|
|Last Modified:||19 Sep 2010 05:50|
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