Chakrabarti, Utpal KR (1977) A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface. In: Solid-State Electronics, 20 (2). pp. 111-112.
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A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.
|Item Type:||Journal Article|
|Additional Information:||Copyright fort this article belongs to Elsevier Science.|
|Department/Centre:||Division of Electrical Sciences > Electrical Engineering|
|Date Deposited:||21 Jan 2010 06:28|
|Last Modified:||19 Sep 2010 05:50|
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