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A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface

Chakrabarti, Utpal KR (1977) A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface. In: Solid-State Electronics, 20 (2). pp. 111-112.

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Abstract

A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

Item Type: Journal Article
Additional Information: Copyright fort this article belongs to Elsevier Science.
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 21 Jan 2010 06:28
Last Modified: 19 Sep 2010 05:50
URI: http://eprints.iisc.ernet.in/id/eprint/24405

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