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Microwave modulation by amorphous-semiconductor switches

Bose, DN and Jani, BJ (1977) Microwave modulation by amorphous-semiconductor switches. In: Electronics Letters, 13 (16). 451 -452.

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Abstract

Microwave modulation has been achieved by using thin-film amorphous-semiconductor switches made of ternary chalcogenides. X-band microwaves were modulated by a threshold switch at frequencies varying from 100 Hz to 1 MHz, with modulation efficiencies comparable to siliconp¿i¿n diodes. The insertion loss was 0.5 to 0.6 dB and the isolation was 18 dB at 100 mA operating current. Possible applications this method are discussed.

Item Type: Journal Article
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Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 21 Jan 2010 05:09
Last Modified: 19 Sep 2010 05:50
URI: http://eprints.iisc.ernet.in/id/eprint/24426

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