Zarabi, MJ and Satyam, M (1974) Switching in copper oxide. In: Journal of Applied Physics, 45 (2). pp. 775-780.
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This paper presents the results of an investigation conducted on the switching behavior of copper oxide. The filamentary nature of the current and also the formation of a copper channel have been observed to be associated with the process of switching. The experiments and the analysis carried out by the authors show that the formation of copper channel is due only to a secondary process and is not responsible for the actual switching of the device to the low-voltage mode. The switching, as is clear from the analysis, seems to be the result of a purely electrothermal process. The effect of the dimensions of the device on the V-I characteristics is also discussed. It has further been shown that it is possible to prevent the formation of copper channel to obtain a monoshot type of switching transition.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||22 Dec 2009 08:38|
|Last Modified:||04 Jan 2013 07:28|
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