Vishwas, M and Sharma, Sudhir Kumar and Rao, Narasimha K and Mohan, S and Gowda, Arjuna KV and Chakradhar, RPS (2009) Optical, dielectric and morphological studies of sol-gel derived nanocrystalline TiO2 films. In: Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 74 (3). pp. 839-842.
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Nanocrystalline TiO2 films have been synthesized on glass and silicon substrates by sol-gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300-1000nm and the optical constants (n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried Out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO2 film deposited on silicon. The C-V measurements show that the film annealed at 300 degrees C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to Elsevier Science.|
|Keywords:||Thin films; Chemical synthesis; Microscopy; Optical properties; Dielectric response|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||07 Dec 2009 07:04|
|Last Modified:||19 Sep 2010 05:52|
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