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RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

Deepak, GC and Bhat, Navakanta (2009) RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices. In: Advanced gate stack, source/drain, and channel engineering for si-based cmos 5: new materials, processes, and equipment, 19 (1). pp. 175-181.

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Abstract

We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550 degrees C, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 10(13)/cm(2) is observed.

Item Type: Journal Article
Additional Information: copyright of this article belongs to Electrochemical society Inc.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 10 Jan 2010 12:04
Last Modified: 10 Jan 2010 12:04
URI: http://eprints.iisc.ernet.in/id/eprint/25247

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