Laha, Apurba and Krupanidhi, SB (2002) Leakage current conduction of pulsed excimer laser ablated BaBi2Nb2O9 thin films. In: Journal of Applied Physics, 92 (1). pp. 415-420.
The leakage current behavior of the BaBi2Nb2O9 (BBN) thin films was investigated over a wide range of temperatures. The current density, calculated from currentâ��voltage (Iâ��V) characteristics at room temperature, was 4.02Ã�10â��9 A/cm2 at an electric field of 3Ã�105 V/m. The Iâ��V characteristics of the films showed ohmic behavior for electric field strength lower than 1 MV/m. Nonlinearity in the current densityâ��voltage (Jâ��V) behavior was observed at an electric field above 1 MV/m. Different conduction mechanisms were brought into picture to explain the Iâ��V characteristics of BBN thin films. The Jâ��V behavior of BBN thin films was found to follow the Lampert's theory of space charge limited conduction in an insulator with traps. Three different regions, i.e., ohmic, trap filled limited, Child's law were explicitly observed in Jâ��V characteristics. The activation energies in the ohmic region calculated from the Arrhenius plot were 0.46, 0.48, and 0.51 eV, respectively. These energies were attributed to the shallow traps, distributed near the conduction band edge in the forbidden gap of the materials.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to American Institute of Physics (AIP).|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||31 Dec 2004|
|Last Modified:||19 Sep 2010 04:17|
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