Verkila, Satish Anand and Bondada, Siva Kumar and Amrutur, Bharadwaj S (2008) A 100MHz to 1GHz, 0.35V to 1.5V supply 256 x 64 SRAM mock using symmetrized 9T SRAM cell with controlled read. In: Joint Conference of the 21st International Conference on VLSI Design/7th International Conference on Embedded Systems, JAN 04-08, 2008, Hyderabad.
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In this paper, we present Dynamic Voltage and Frequency Managed 256 x 64 SRAM block in 65nm technology, for frequency ranging from 100MHz to 1GHz. The total energy is minimized for any operating frequency in the above range and leakage energy is minimized during standby mode. Since noise margin of SRAM cell deteriorates at low voltages, we propose Static Noise Margin improvement circuitry, which symmetrizes the SRAM cell by controlling the body bias of pull down NMOS transistor. We used a 9T SRAM cell that isolates Read and Hold Noise Margin and has less leakage. We have implemented an efficient technique of pushing address decoder into zigzag-super-cut-off in stand-by mode without affecting its performance in active mode of operation. The Read Bit Line (RBL) voltage drop is controlled and pre-charge of bit lines is done only when needed for reducing power wastage.
|Item Type:||Conference Paper|
|Additional Information:||Copyright 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||22 Feb 2010 10:48|
|Last Modified:||19 Sep 2010 05:55|
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