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Drive current boosting of n-type tunnel FET with strained SiGe layer at source

Patel, Nayan and Ramesha, A and Mahapatra, Santanu (2008) Drive current boosting of n-type tunnel FET with strained SiGe layer at source. In: Microelectronics Journal, 39 (12). pp. 1671-1677.

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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.02.020

Abstract

Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60 mV/decade subthreshold swing along with a significant improvement in ION. The enhancement in ION is achieved by introducing a thin strained SiGe layer on top of the silicon source. Through 2D simulations it is observed that the device is nearly free from short channel effect (SCE) and its immunity towards drain induced barrier lowering (DIBL) increases with increasing germanium mole fraction. It is also found that the body bias does not change the drive current but after body current gets affected. An ION of View the MathML source and a minimum average subthreshold swing of 13 mV/decade is achieved for 100 nm channel length device with 1.2 V supply voltage and 0.7 Ge mole fraction, while maintaining the IOFF in fA range.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Band-to-band tunneling;Subthreshold swing;Gated p–i–n diode;Tunnel field effect transistor (TFET);Device simulation.
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Date Deposited: 04 Jun 2010 06:04
Last Modified: 19 Sep 2010 05:56
URI: http://eprints.iisc.ernet.in/id/eprint/26147

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