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Electrical Properties of Thermal Evaporated Cd1−xMnxS Nanocrystalline Films

Reddy, D Sreekantha and Kumar, K Siva and Reddy, N Koteeswara and Reddy, BK and Gunasekhar, KR and Reddy, P Sreedhara (2008) Electrical Properties of Thermal Evaporated Cd1−xMnxS Nanocrystalline Films. In: Journal of the Electrochemical Society, 155 (6). H407-H411.

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Abstract

Thin films of Cd1−xMnxS (0<=x<=0.5) were deposited on glass substrates by thermal evaporation. All the films were deposited at 300 K and annealed at 373, 473, and 573 K for 1 h in a high vacuum in the range 10−4 Pa. The as-deposited and the annealed films were characterized for composition, structure, and microstructure by using energy-dispersive X-ray, X-ray diffraction, scanning electron microscopy, and atomic force microscopy (AFM). The electrical properties were studied by Hall effect measurement. Electrical conductivity was studied in the temperature range 190–450 K. AFM studies showed that all the films were in nanocrystalline form with grain size varying in the range between 36 and 82 nm. Grain size studies showed a definite increase with annealing temperature. All the films exhibited wurtzite structure of the host material. The lattice parameter varied linearly with composition, following Vegard's law in the entire composition range. Grain size, electrical conductivity, Hall mobility, carrier concentration, and activation energy varied, exhibiting either maxima or minima at x=0.3.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to The Electrochemical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 04 Jun 2010 07:04
Last Modified: 19 Sep 2010 05:57
URI: http://eprints.iisc.ernet.in/id/eprint/26260

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