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Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

Hembram, KPSS and Dutta, Gargi and Waghmare, Umesh V and Raoa, G Mohan (2007) Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering. In: Physica B: Condensed Matter, 399 (1). pp. 21-26.

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Abstract

Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 29 Mar 2010 10:17
Last Modified: 19 Sep 2010 05:57
URI: http://eprints.iisc.ernet.in/id/eprint/26312

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