Pradhan, Narayan and Acharya, Somobrata and Ariga, Katsuhiko and Karan, Niladri S and Sarma, DD and Wada, Yoshiki and Efrima, Shlomo and Golan, Yuval (2010) Chemically Programmed Ultrahigh Density Two-Dimensional Semiconductor Superlattice Array. In: Journal of the American Chemical Society, 132 (4). pp. 1212-1213.
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Designing an ultrahigh density linear superlattice array consisting of periodic blocks of different semiconductors in the strong confinement regime via a direct synthetic route remains an unachieved challenge in nanotechnology. We report a general synthesis route for the formulation of a large-area ultrahigh density superlattice array that involves adjoining multiple units of ZnS rods by prolate US particles at the tips. A single one-dimensional wire is 300-500 nm long and consists of periodic quantum wells with a barrier width of 5 nm provided by ZnS and a well width of 1-2 nm provided by CdS, defining a superlattice structure. The synthesis route allows for tailoring of ultranarrow laserlike emissions (fwhm approximate to 125 meV) originating from strong interwell energy dispersion along with control of the width, pitch, and registry of the superlattice assembly. Such an exceptional high-density superlattice array could form the basis of ultrahigh density memories in addition to offering opportunities for technological advancement in conventional heterojunction-based device applications.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Chemical Society.|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit
|Date Deposited:||23 Mar 2010 10:54|
|Last Modified:||24 Feb 2012 07:12|
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