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Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry

Krishnan, R and Mathews, Tom and Balamurugan, AK and Dash, S and Tyagi, AK and Raj, Baldev and Jayaram, Vikram (2010) Reactive Pulsed Laser Deposition of titanium nitride thin film: Optimization of process parameters using Secondary Ion Mass Spectrometry. In: Applied Surface Science, 256 (10). pp. 3077-3080.

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Abstract

Reactive Pulsed Laser Deposition is a single step process wherein the ablated elemental metal reacts with a low pressure ambient gas to form a compound. We report here a Secondary Ion Mass Spectrometry based analytical methodology to conduct minimum number of experiments to arrive at optimal process parameters to obtain high quality TiN thin film. Quality of these films was confirmed by electron microscopic analysis. This methodology can be extended for optimization of other process parameters and materials. (C) 2009 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: TiN; SIMS; Thin films; Reactive Pulsed Laser Deposition; Multilayer
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 22 Mar 2010 08:58
Last Modified: 19 Sep 2010 05:57
URI: http://eprints.iisc.ernet.in/id/eprint/26409

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