High pressure studies on the electrical resistivity of As-Te-bond Si glasses and the effect of network topological thresholds

Verma, Deepti and Sharmila, BH and Rukmani, K and Asokan, S (2008) High pressure studies on the electrical resistivity of As-Te-bond Si glasses and the effect of network topological thresholds. In: International Journal of High Pressure Research, 28 (1). pp. 55-62.

PDF 629296_731208416_791365472.pdf - Published Version Restricted to Registered users only Download (274Kb) | Request a copy

Abstract

The variation of resistivity in an amorphous As30Te70-xSix system of glasses with high pressure has been studied for pressures up to 8 GPa. It is found that the electrical resistivity and the conduction activation energy decrease continuously with increase in pressure, and samples become metallic in the pressure range 1.0-2.0 GPa. Temperature variation studies carried out at a pressure of 0.92 GPa show that the activation energies lie in the range 0.16-0.18eV. Studies on the composition/average co-ordination number (r) dependence of normalized electrical resistivity at different pressures indicate that rigidity percolation is extended, the onset of the intermediate phase is around (r) = 2.44, and completion at (r) = 2.56, respectively, while the chemical threshold is at (r) = 2.67. These results compare favorably with those obtained from electrical switching and differential scanning calorimetric studies.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to Taylor and Francis Group.
Keywords:	chalcogenides;high pressure;electrical resistivity;topological thresholds.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited:	23 Mar 2010 07:28
Last Modified:	19 Sep 2010 05:58
URI:	http://eprints.iisc.ernet.in/id/eprint/26479

Actions (login required)

View Item