Ray, Biswajit and Shubhakar, * and Mahapatra, Santanu (2007) Necessity for quantum mechanical simulation for the future technology nodes. In: 14th International Workshop on the Physics of Semiconductor Devices, DEC 17-20, 2007, Mumbai.
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In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a Double Gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body, thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi-classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.
|Item Type:||Conference Paper|
|Additional Information:||Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||27 Mar 2010 08:15|
|Last Modified:||19 Sep 2010 05:58|
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