De, D and Kumar, A and Adhikari, SM and Pahari, S and Islam, N and Banerjee, P and Biswas, SK and Bhattacharya, S and Ghatak, KP (2010) Influence of quantum confinement on the photoemission from superlattices of optoelectronic materials. In: Superlattices and Microstructures, 47 (3). pp. 377-410.
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We study the photoemission from quantum wire and quantum dot superlattices with graded interfaces of optoelectronic materials on the basis of newly formulated electron dispersion relations in the presence of external photo-excitation. Besides, the influence of a magnetic field on the photoemission from the aforementioned superlattices together with quantum well superlattices in the presence of a quantizing magnetic field has also been studied in this context. It has been observed taking into account HgTe/Hg1-xCdxTe and InxGa1-xAs/InP that the photoemission from these nanostructures increases with increasing photon energy in quantized steps and exhibits oscillatory dependences with the increase in carrier concentration. Besides, the photoemission decreases with increasing light intensity and wavelength, together with the fact that said emission decreases with increasing thickness exhibiting oscillatory spikes. The strong dependences of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six applications in the fields of low dimensional systems in general. (C) 2010 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Photoemission;Quantum well superlattices;Quantum well wire superlattices;Quantum dot superlattices;Magnetic quantization|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||11 Jun 2010 07:42|
|Last Modified:||29 Feb 2012 06:22|
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