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Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence

Lokesh, R and Udayashankar, NK and Asokan, S (2010) Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence. In: Journal of Non-Crystalline Solids, 356 (6-8). pp. 321-325.

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Abstract

Studies on the electrical switching behavior of melt quenched bulk Si15Te85-xSbx glasses have been undertaken in the composition range (1 <= x <= 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si15Te85-x base glass. It has been observed that all the Si15Te85-xSbx glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (V-th) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si15Te85-xSbx glasses studied have a moderate thermal stability. (C) 2009 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Chalcogenides; High field effects
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 30 Mar 2010 09:03
Last Modified: 19 Sep 2010 05:58
URI: http://eprints.iisc.ernet.in/id/eprint/26641

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