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Process variability-aware statistical hybrid modeling of dynamic power dissipation in 65 nm CMOS designs

Harish, BP and Bhat, Navakanta and Patil, Mahesh B (2007) Process variability-aware statistical hybrid modeling of dynamic power dissipation in 65 nm CMOS designs. In: International Conference on Computing - Theory and Applications (ICCTA 2007), MAR 05-07, 2007, Calcutta.

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Abstract

A generalized technique is proposed for modeling the effects of process variations on dynamic power by directly relating the variations in process parameters to variations in dynamic power of a digital circuit. The dynamic power of a 2-input NAND gate is characterized by mixed-mode simulations, to be used as a library element for 65mn gate length technology. The proposed methodology is demonstrated with a multiplier circuit built using the NAND gate library, by characterizing its dynamic power through Monte Carlo analysis. The statistical technique of Response. Surface Methodology (RSM) using Design of Experiments (DOE) and Least Squares Method (LSM), are employed to generate a "hybrid model" for gate power to account for simultaneous variations in multiple process parameters. We demonstrate that our hybrid model based statistical design approach results in considerable savings in the power budget of low power CMOS designs with an error of less than 1%, with significant reductions in uncertainty by atleast 6X on a normalized basis, against worst case design.

Item Type: Conference Paper
Additional Information: Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 10 Jun 2010 06:55
Last Modified: 20 Oct 2011 06:01
URI: http://eprints.iisc.ernet.in/id/eprint/26814

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