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Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique

Devika, M and Reddy, Koteeswara N and Reddy, Sreekantha D and Reddy, Venkatramana S and Ramesh, K and RGopal, ES and Gunasekhar, KR and Ganesan, V and Hahn, YB (2007) Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique. In: Journal of Physics: Condensed Matter, 19 (30).

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Official URL: http://iopscience.iop.org/0953-8984/19/30/306003

Abstract

Tin monosulfide (SnS) films with varying distance between the source and substrate (DSS) were prepared by the thermal evaporation technique at a temperature of 300 degrees C to investigate the effect of the DSS on the physical properties. The physical properties of the as-deposited films are strongly influenced by the variation of DSS. The thickness, Sn to S at.% ratio, grain size, and root mean square (rms) roughness of the films decreased with the increase of DSS. The films grown at DSS = 10 and 15 cm exhibited nearly single-crystalline nature with low electrical resistivity. From Hall-effect measurements, it is observed that the films grown at DSS <= 15 cm have p-type conduction and the films grown at higher distances have n-type conduction due to the variation of the Sn/S ratio. The films grown at DSS = 15 cm showed higher optical band gap of 1.36 eV as compared with the films grown at other distances. The effect of the DSS on the physical properties of SnS films is discussed and reported.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 11 Jun 2010 06:58
Last Modified: 19 Sep 2010 05:59
URI: http://eprints.iisc.ernet.in/id/eprint/26851

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