Kumari, Neelam and Krupanidhi, SB and Varma, KBR (2010) Spectroscopic ellipsometry investigations of the optical properties of manganese doped bismuth vanadate thin films. In: Materials Research Bulletin, 45 (4). pp. 464-473.
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The optical properties of Bi(2)V(1-x)MnxO(5.5-x) (x=0.05, 0.1, 0.15 and 0.2 at.%) thin films fabricated by pulsed laser deposition on platinized Silicon Substrates were Studied in UV-visible spectral region (1.51-4.17 CV) using spectroscopic ellipsometry. The optical constants and thicknesses of these films have been obtained by fitting the ellipsometric data (Psi and Delta) using a multilayer four-phase model system and a relaxed Lorentz oscillator dispersion relation. The surface roughness and film thickness obtained by spectroscopic ellipsometry were found to be consistent with the results obtained by atomic force and scanning electron microscopy. The refractive index measured at 650 nm does not show any marginal increase with Mn content. Further, the extinction coefficient does not show much decrease with increasing Mn content. An increase in optical band gap energy from 2.52 to 2.77 eV with increasing Mn Content from x = 0.05 to 0.15 was attributed to the increase in oxygen ion vacancy disorder. (C) 2009 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Thin films;Optical materials;Laser deposition;Atomic force microscopy;Optical properties|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||09 Jun 2010 05:49|
|Last Modified:||19 Sep 2010 05:59|
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