Majumdar, Kausik and Murali, Kota VRM and Bhat, Navakanta and Lin, Yu-Ming (2010) Intrinsic limits of subthreshold slope in biased bilayer graphene transistor. In: Applied Physics Letters, 96 (12).
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In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent band gap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60 mV/decade at room temperature, but much below the results experimentally shown till date, indicating room for technological improvement of bilayer graphene.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Keywords:||electronic structure;electrostatics;energy gap;graphene; multilayers;transistors|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||08 Jun 2010 07:27|
|Last Modified:||19 Sep 2010 06:00|
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