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Response time measurement in flow induced signal generation on semiconductors

Sarkar, Sankha S and Ghosh, Saurabh and Sood, AK (2007) Response time measurement in flow induced signal generation on semiconductors. In: Sensors and Actuators A: Physical, 137 (2). pp. 209-212.

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Abstract

Measurable electrical signal is generated when a gas flows over a variety of solids, including doped semiconductors, even at the modest speed of a few meters per second. The underlying mechanism is an interesting interplay of Bernoulli's principle and the Seebeck effect. The electrical signal depends on the square of Mach number (M) and is proportional to the Seebeck coefficient (S) of the solids. Here we present experimental estimate of the response time of the signal rise and fall process, i.e. how fast the semiconductor materials respond to a steady flow as soon as it is set on or off. A theoretical model is also presented to understand the process and the dependence of the response time on the nature and physical dimensions of the semiconductor material used and they are compared with the experimental observations. (c) 2007 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Seebeck effect; Bernoulli’s principle; Response time; Semiconductor;Heat diffusion.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 May 2010 05:55
Last Modified: 19 Sep 2010 06:00
URI: http://eprints.iisc.ernet.in/id/eprint/27156

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