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A silicon micromachined photonic band gap cell, characteristics and an application

Sathanur, Arun V and Vinoy, KJ (2005) A silicon micromachined photonic band gap cell, characteristics and an application. In: Asia-Pacific Microwave Conference, DEC 04-07, 2005, Suzhou.

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Abstract

A novel PBG cell based on micromachining of Silicon using wet anisotropic etching has been considered. Since this is based on etching of the Silicon substrate, it is amenable to fabrication with standard Silicon processes and integration with millimeter wave circuits. We characterize this kind of PBG cell by full wave simulations using a time domain code. For the purpose of characterization, the scenario of a 50 ohm microstrip line placed on a Silicon substrate which is anisotropically etched to create patterns with sloping walls is considered. This is shown to produce the well known PBG response of stop bands in certain frequency bands. We look at the variation in the transmission coefficient (S-21) response as the number of periods, length based average fill factor and depth of micromachining are varied. One application of a low pass filter has been proposed and simulated results are given.

Item Type: Conference Paper
Additional Information: Copyright 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 09 Jun 2010 04:59
Last Modified: 02 Nov 2011 05:26
URI: http://eprints.iisc.ernet.in/id/eprint/27315

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