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Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes

Late, Dattatray J and Ghosh, Anupama and Subrahmanyam, KS and Panchakarla, LS and Krupanidhi, SB and Rao, CNR (2010) Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes. In: Solid State Communications, 150 (15-16). pp. 734-738.

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Official URL: http://dx.doi.org/10.1016/j.ssc.2010.01.030

Abstract

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Graphene;Field-effect transistor;Mobility;Doping
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 07 Jun 2010 06:14
Last Modified: 19 Sep 2010 06:01
URI: http://eprints.iisc.ernet.in/id/eprint/27436

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