Thathachary, Arun V and Bhat, KN and Bhat, Navakanta and Hegde, MS (2010) Fermi level depinning at the germanium Schottky interface through sulfur passivation. In: Applied Physics Letters, 96 (15).
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We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous (NH4)(2)S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming that the Fermi level is depinned. Examination of the passivated surface using x-ray photoelectron spectroscopy reveals bonding between Ge and sulfur.It is shown that good Ohmic contacts to n-type Ge and a hole barrier height (phi(Bp)) of 0.6 eV to p-type Ge can be achieved after this passivation treatment, with Zr Schottky contacts. This is the highest phi(Bp) reported so far.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Keywords:||elemental semiconductors;Fermi level;germanium;interface states;ohmic contacts;passivation;Schottky barriers; work function;X-ray photoelectron spectra; zirconium|
|Department/Centre:||Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Electrical Sciences > Electrical Communication Engineering
|Date Deposited:||03 May 2010 06:47|
|Last Modified:||19 Sep 2010 06:01|
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