Agilan, S and Venkatachalam, S and Mangalaraj, D and Narayandass, Sa K and Velumani, S and Rao, Mohan G and Singh, Vijay P (2007) Structural and photoelectrical characterization of hot wall deposited CuInSe2 thin films and the fabrication of CuInSe2 based solar cells. In: Symposium on Materials Characterization held at the 14th International Materials Research Congress, AUG 21-25, 2005, Cancun, MEXICO.
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Films of CuInSe2 were deposited onto glass substrates by a hot wall deposition method using bulk CuInSe2 as a source material. All the deposited CuInSe2 films were found to be polycrystalline in nature exhibiting the chalcopyrite structure with the crystallite orientation along (101),(112),(103),(211),(220),(312) and (400) directions. The photocurrent was found to increase with increase in film thickness and also with increase of light intensity. Photocurrent spectra show a peak related to the band-to-band transition. The spectral response of CuInSe2 thin films was studied by allowing the radiation to pass through a series of interference filters in the wavelength range 700-1200 rim. Films of higher thickness exhibited higher photosensitivity while low thickness films exhibited moderate photosensitivity. CuInSe2-based Solar cells with different types of buffer layers such as US, Cdse, CuInSe2 and CdSe0.7Te0.3 were fabricated. The current and voltage were measured using an optical power meter and an electrometer respectively. The fabricated solar cells were illuminated using 100 mW/cm(2) white light under AM1 conditions. (C) 2006 Elsevier Inc. All rights reserved.
|Item Type:||Conference Paper|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Hot wall deposition;CuInSe2 thin films;Structure; Photoconduction;Solar Cell.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||04 May 2010 04:30|
|Last Modified:||19 Sep 2010 06:01|
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