Singh, MP and Thakur, CS and Shalini, K and Bhat, N and Shivashankar, SA (2003) Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition. In: Applied Physics Letters, 83 (14). pp. 2889-2891.
We report the structural and electrical properties of $Er_2O_3$ films grown on Si(100) in the temperature range 450-600 °C by low-pressure metalorganic chemical vapor deposition using Er(acac)3.phen, the phenanthroline adduct of erbium acetylacetonate, as the precursor. The film properties are correlated with the growth and processing conditions. The structural characterization reveals that films grown at lower temperatures are smooth, but poorly crystalline, whereas films grown at higher temperatures are polycrystalline. A dielectric constant in the range 8-20, a minimum total fixed oxide charge density $(N_f) of -1x10^1^0 cm^-2$, and a minimum hysteresis of 10 mV in the bidirectional capacitance-voltage characteristics are demonstrated.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to American Institute of Physics (AIP).|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||11 Apr 2005|
|Last Modified:||19 Sep 2010 04:18|
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