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Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region

Mahadevan, S and Suryan, G (1968) Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region. In: Physics Letters A, 27 (3). pp. 149-150.

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Official URL: http://dx.doi.org/10.1016/0375-9601(68)91175-4

Abstract

Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 21 May 2010 10:18
Last Modified: 19 Sep 2010 06:06
URI: http://eprints.iisc.ernet.in/id/eprint/27730

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