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Simplified theory of carrier back-scattering in semiconducting carbon nanotubes: A Kane's model approach

Bhattacharya, Sitangshu and Mahapatra, Santanu (2010) Simplified theory of carrier back-scattering in semiconducting carbon nanotubes: A Kane's model approach. In: 11th Joint MMM-Intermag Conference, JAN 18-22, 2010, Washington, DC.

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Official URL: http://jap.aip.org/japiau/v107/i9/p094314_s1

Abstract

We present a simplified yet analytical formulation of the carrier backscattering coefficient for zig-zag semiconducting single walled carbon nanotubes under diffusive regime. The electron-phonon scattering rate for longitudinal acoustic, optical, and zone-boundary phonon emissions for both inter- and intrasubband transition rates have been derived using Kane's nonparabolic energy subband model.The expressions for the mean free path and diffusive resistance have been formulated incorporating the aforementioned phonon scattering. Appropriate overlap function in Fermi's golden rule has been incorporated for a more general approach. The effect of energy subbands on low and high bias zones for the onset of longitudinal acoustic, optical, and zone-boundary phonon emissions and absorption have been analytically addressed. 90% transmission of the carriers from the source to the drain at 400 K for a 5 mu m long nanotube at 105 V m(-1) has been exhibited. The analytical results are in good agreement with the available experimental data. (c) 2010 American Institute of Physics.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)
Date Deposited: 25 Jun 2010 06:16
Last Modified: 19 Sep 2010 06:08
URI: http://eprints.iisc.ernet.in/id/eprint/28288

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