Investigation of activated transport in hole doped rare earth manganites in the high temperature paramagnetic regime

Jain, Himanshu (2006) Investigation of activated transport in hole doped rare earth manganites in the high temperature paramagnetic regime. In: Solid State Communications, 138 (6). 318 -323.

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Abstract

Electronic transport in the high temperature paramagnetic regime of the colossal magnetoresistive oxides, La(1-x)A(x)MnO(3), A=Ca, Sr, Ba, x similar or equal to 0.1-0.3, has been investigated using resistivity measurements. The main motivation for this work is to relook into the actual magnitude of the activation energy for transport in a number of manganites and study its variation as a function of hole doping (x), average A-site cation radius (< r(A)>), cationic disorder (sigma(2)) and strain (epsilon(zz)). We show that contrary to current practice, the description of a single activation energy in this phase is not entirely accurate. Our results clearly reveal a strong dependence of the activation energy on the hole doping as well as disorder. Comparing the results across different substituent species with different < r(A)> reveals the importance of sigma(2) as a metric to qualify any analysis based on (r(A)). (c) 2006 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	A. Rare earth manganites; D. Electronic transport
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 Jul 2010 09:56
Last Modified:	19 Sep 2010 06:10
URI:	http://eprints.iisc.ernet.in/id/eprint/28877

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