Majumdar, K and Majhi, P and Bhat, N and Jammy, R (2010) HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET. In: IEEE Transactions on Nanotechnology, 9 (3). pp. 342-344.
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In this letter, we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of an HEMT and a FinFET, to obtain excellent performance and good OFF-state control. Followed by the description of the design, 3-D device simulation has been performed to predict the characteristics of the device. The device has been benchmarked against published state of the art HEMT as well as planar and nonplanar Si n-MOSFET data of comparable gate length using standard benchmarking techniques.
|Item Type:||Journal Article|
|Additional Information:||Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering
|Date Deposited:||15 Jul 2010 08:59|
|Last Modified:||19 Sep 2010 06:10|
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