On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin films

Harshavardhan, Solomon K and Hegde, MS (1989) On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin films. In: Solid State Communications, 69 (1). pp. 117-120.

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Abstract

It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalcogenide thin films undergoes predominant photooxidation when irradiated with band gap photons. The role of Ge appears to be that of providing a highly porous low density microstructure and photooxidation seems to be a direct consequence of such large scale porosity in these films. The formation of low vapour pressure oxide fractions of Ge and Te and volatile high vapour pressure oxide fractions of S and Se is responsible for anomalous photoinduced transformations in these films.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to Elsevier Science.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	14 Jul 2010 10:48
Last Modified:	19 Sep 2010 06:11
URI:	http://eprints.iisc.ernet.in/id/eprint/29284

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