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$CaBi_2Ta_2O_9$ ferroelectric thin films prepared by pulsed laser deposition

Das, Rasmi R and Rodriguez, RJ and Katiyara, Ram S and Krupanidhi, SB (2001) $CaBi_2Ta_2O_9$ ferroelectric thin films prepared by pulsed laser deposition. In: Applied Physics Letters, 78 (19). pp. 2925-2927.

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Abstract

Thin films of $CaBi_2Ta_2O_9$ (CBT) were deposited on $Pt/TiO_2/SiO_2/Si$ substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700°C. The presence of (115) and (00 ) orientations confirm the phase formation at the lower temperature (500°C). Microstructure evolution of CBT films with oxygen pressure of 100-200 mTorr at a substrate temperature of 650°C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650°C exhibited a maximum polarization of (2Pm) 17 µC/cm2, remanent polarization of (2Pr) 8 µC/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (~115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700°C) was explained by the increased grain size. The higher leakage current density $(~10^7 A/cm^2)$ at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to American Institute of Physics (AIP).
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 31 Mar 2005
Last Modified: 19 Sep 2010 04:18
URI: http://eprints.iisc.ernet.in/id/eprint/2976

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