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Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films

Dobal, PS and Katiyar, RS and Bharadwaja, SSN and Krupanidhi, SB (2001) Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films. In: Applied Physics Letters, 78 (12). pp. 1730-1732.

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Abstract

Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate (PZ) is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300°C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to American Institute of Physics (AIP).
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 31 Mar 2005
Last Modified: 19 Sep 2010 04:18
URI: http://eprints.iisc.ernet.in/id/eprint/2981

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