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Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes

Natarajan, K and Ramkumar, K and Satyam, M (1989) Reverse characteristics of phosphorous passivated polysilicon p-n junction diodes. In: Physica Status Solidi A, 115 (2). K265-K268.

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Official URL: http://www3.interscience.wiley.com/journal/1124316...
Item Type: Editorials/Short Communications
Additional Information: Copyright of this article belongs to John Wiley and Sons.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 16 Jul 2010 08:44
Last Modified: 19 Sep 2010 06:11
URI: http://eprints.iisc.ernet.in/id/eprint/30325

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