Mangalam, RVK and Ranjith, R and Iyo, A and Sundaresan, A and Krupanidhi, SB and Rao, CNR (2006) Ferroelectricity in Bi26-xMxO40-delta (M = Al and Ga) with the gamma-Bi2O3 structure. In: Solid State Communications, 140 (1). pp. 42-44.
1.pdf - Published Version
Restricted to Registered users only
Download (458Kb) | Request a copy
We report on the dielectric proper-ties of bismuth aluminate and gallate with Bi:AI(Ga) ratio of 1: 1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group 123) with a similar to 10.18 angstrom rather than in the perovskite structure.This cubic phase is related to the gamma-Bi2O3 structure which has the actual chemical formula Bi-24(3+) (Bi3+Bi5+)O40-delta. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24f and 2a sites. These compounds exibit ferroclectric hysteresis at room temperature with a weak polarization. (c) 2006 Elsevier Ltd. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||A.Ferroelectrics; C.X-ray scattering; D.Dielectric response.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||01 Sep 2010 08:51|
|Last Modified:||19 Sep 2010 06:12|
Actions (login required)