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Ferroelectricity in Bi26-xMxO40-delta (M = Al and Ga) with the gamma-Bi2O3 structure

Mangalam, RVK and Ranjith, R and Iyo, A and Sundaresan, A and Krupanidhi, SB and Rao, CNR (2006) Ferroelectricity in Bi26-xMxO40-delta (M = Al and Ga) with the gamma-Bi2O3 structure. In: Solid State Communications, 140 (1). pp. 42-44.

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Official URL: http://dx.doi.org/10.1016/j.ssc.2006.07.015

Abstract

We report on the dielectric proper-ties of bismuth aluminate and gallate with Bi:AI(Ga) ratio of 1: 1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group 123) with a similar to 10.18 angstrom rather than in the perovskite structure.This cubic phase is related to the gamma-Bi2O3 structure which has the actual chemical formula Bi-24(3+) (Bi3+Bi5+)O40-delta. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24f and 2a sites. These compounds exibit ferroclectric hysteresis at room temperature with a weak polarization. (c) 2006 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: A.Ferroelectrics; C.X-ray scattering; D.Dielectric response.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 01 Sep 2010 08:51
Last Modified: 19 Sep 2010 06:12
URI: http://eprints.iisc.ernet.in/id/eprint/30930

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