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Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

Vasu, KS and Chakraborty, Biswanath and Sampath, S and Sood, AK (2010) Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis. In: Solid State Communications, 150 (29-30). pp. 1295-1298.

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Official URL: http://dx.doi.org/10.1016/j.ssc.2010.05.018

Abstract

We demonstrate a top-gated field effect transistor made of a reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. The Raman spectrum of RGO flakes of typical size of 5 mu m x 5 mu m shows a single 2D band at 2687 cm(-1), characteristic of single-layer graphene.The two-probe current-voltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 mu m using ac dielectrophoresis, show ohmic behavior with a resistance of similar to 37 k Omega. The temperature dependence of the resistance (R) of RGO measured between 305 K and 393 K yields a temperature coefficient of resistance [dR/dT]/R similar to -9.5 x 10(-4)/K, the same as that of mechanically exfoliated single-layer graphene. The field-effect transistor action was obtained by electrochemical top-gating using a solid polymer electrolyte (PEO + LiClO4) and Pt wire. The ambipolar nature of graphene flakes is observed up to a doping level of similar to 6 x 10(12)/cm(2) and carrier mobility of similar to 50 cm(2)/V s. The source-drain current characteristics show a tendency of current saturation at high source-drain voltage which is analyzed quantitatively by a diffusive transport model. (C) 2010 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Graphene;Field-effect transistor;Dielectrophoresis;Raman scattering
Department/Centre: Division of Chemical Sciences > Inorganic & Physical Chemistry
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 02 Aug 2010 09:12
Last Modified: 19 Sep 2010 06:13
URI: http://eprints.iisc.ernet.in/id/eprint/31072

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