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Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size

Natarajan, K and Ramkumar, K and Satyam, M (1989) Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size. In: Journal of Applied Physics, 66 (5). pp. 2206-2208.

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Abstract

This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.

Item Type: Editorials/Short Communications
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 09 Aug 2010 06:48
Last Modified: 19 Sep 2010 06:13
URI: http://eprints.iisc.ernet.in/id/eprint/31172

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