Kumar, Rakesh R and Yuvaraj, D and Rao, Narasimha K (2010) Growth and characterization of germanium nanowires by electron beam evaporation. In: Materials Letters, 64 (16). pp. 1766-1768.
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Germanium nanowires were grown on Au coated Si substrates at 380 degrees C in a high vacuum (5 x 10(-5) Torr) by e-beam evaporation of Germanium (Ge). The morphology observation by a field emission scanning electron microscope (FESEM) shows that the grown nanowires are randomly oriented with an average length and diameter of 600 nm and 120 nm respectively for a deposition time of 60 min. The nanowire growth ratewas measured to be similar to 10 nm/min. Transmission electron microscope (TEM) studies revealed that the Ge nanowires were single crystalline in nature and further energy dispersive X-ray analysis(EDAX) has shown that the tip of the grown nanowires was capped with Au nanoparticles, this shows that the growth of the Ge nanowires occurs by the vapour liquid solid (VLS) mechanism. HRTEM studies on the grown Ge nanowire show that they are single crystalline in nature and the growth direction was identified to be along . (C) 2010 Elsevier B.V. All rights reserved.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Semiconductors;Ge nanowires;Electron beam evaporation;VLS growth mechanism;Au catalyst;Thin films|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||24 Aug 2010 06:00|
|Last Modified:||19 Sep 2010 06:14|
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