Hole pairing within an extended Anderson impurity model applicable to the high-Tc cuprates

Sarma, DD and Ramasesha, S and Taraphder, A (1989) Hole pairing within an extended Anderson impurity model applicable to the high-Tc cuprates. In: Physical Review B: Condensed Matter, 39 (16). 12286 -12289.

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Abstract

We calculate the binding energy of a hole pair within the extended Anderson Hamiltonian for the high-Tc cuprates including a Cu impurity and an oxygen-derived band. The results indicate that stable hole pairs can be formed for intra-atomic and interatomic Coulomb repulsion strengths larger than 6 and 3.5 eV, respectively. It is also shown that the total hybridization strength between the Cu 3d and oxygen p band should be less than 2.5 eV. The hole pairing takes place primarily within the oxygen-derived p band. The range of parameter values for which hole pairing occurs is also consistent with the earlier photoemission results from these cuprates.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Physical & Mathematical Sciences > Physics
Date Deposited:	25 Aug 2010 06:18
Last Modified:	19 Sep 2010 06:14
URI:	http://eprints.iisc.ernet.in/id/eprint/31373

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