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Surface Structures of Silicon and Germanium

Ridgway, JWT (1978) Surface Structures of Silicon and Germanium. In: Indian Journal of Physics A and Proceedings of the Indian Association for the Cultivation of Science A, 52 (5). pp. 488-498.

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Abstract

Si and Ge were cleaved on the (111) plane under ultra high vacuum and exposed to O and subsequent heat treatment. LEED and spot photometric measurements were taken. Cleaved surfaces for both Si and Ge gave the expected (2 x 1) structure. Results for O exposure were qualitatively for Si and Ge. The 1/2 orders disappeared after exposure to approx = 10 exp - exp 7. Integral orders started to weaken at 10 exp -6 to 10 exp - exp 2 torr min., disappearing at 10 exp -1 torr min. Heat treatment of Si at 900 deg C for several seconds restored the integral orders and further heating gave a new pattern with 1/3 orders. Exposure to 2 x 10 exp -6 torr min O without further heating weakened the fractional orders and at 10 exp -5 torr min they disappeared. Integral orders remained after further heating in O. For Ge integral orders were not restored after 0 exposure until heat treatment had continued at 550 deg C for several min. The (1 x 1) structure disappeared after heating at 590 deg C in 7 x 10 exp -1 torr O and further heating at 590 deg C without O restored the integral order Variations of intensity with voltage were measured for the (00) and (20) spots. The results supported a model proposed by Haneman (Phys. Rev., 1968, 170, 705) involving two kinds of atom sites on the cleaved surface. 20 ref.--E.J.S.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Indian Assn Cultivation Sci.
Department/Centre: Others
Date Deposited: 23 Aug 2010 06:49
Last Modified: 23 Aug 2010 06:49
URI: http://eprints.iisc.ernet.in/id/eprint/31441

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