I–U Characteristics of MOS Structures on Polycrystalline Silicon

Lakshmi, MVS and Ramkumar, K (1989) I–U Characteristics of MOS Structures on Polycrystalline Silicon. In: Physica Status Solidi A, 111 (2). 667 -674.

PDF char.pdf - Published Version Restricted to Registered users only Download (439Kb) | Request a copy

Abstract

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	19 Aug 2010 12:22
Last Modified:	19 Sep 2010 06:14
URI:	http://eprints.iisc.ernet.in/id/eprint/31478

Actions (login required)

View Item