Shashikala, MN and Sangunni, KS and Bhat, HL (1988) Ferroelectricity in DTAAP. In: Ferroelectrics Letters Section, 9 (1). pp. 19-25.
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Official URL: http://www.informaworld.com/smpp/753330732-646853/...
Abstract
The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with increasing deuterium content from 45°C for TAAP to ∼ 87°C for DTAAP indicating that hydrogen bonds play an important role in the ferroelectric transition of this crystal.
| Item Type: | Journal Article |
|---|---|
| Additional Information: | Copyright of this article belongs to Taylor and Francis Group. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 30 Aug 2010 09:47 |
| Last Modified: | 30 Aug 2010 09:47 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/31574 |
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